Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
Creators
- M. van Rijnbach1
- P. Allport2
- I. Asensi3
- I. Berdalovic4
- D. Bortoletto5
- C. Buttar6
- R. Cardella7
- F. Dachs8
- V. Dao8
- H. Denizli9
- D. Dobrijevic7
- M. Dyndal8
- L. Flores5
- P. Freeman2
- A. Gabrielli8
- L. Gonella2
- M. LeBlanc8
- K. Oyulmaz10
- H. Pernegger8
- F. Piro11
- P. Riedler8
- H. Sandaker12
- C. Solans8
- W. Snoeys8
- T. Suligoj4
- J. Torres3
- S. Worm13
- 1. CERN and University of Oslo
- 2. University of Birmingham
- 3. University of Valencia
- 4. University of Zagreb
- 5. University of Oxford
- 6. University of Glasgow
- 7. University of Geneva
- 8. CERN
- 9. Ecole Polytechnique Fed´ erale de Lausanne
- 10. Bolu Abant Izzet Baysal University
- 11. CERN AND Advanced Quantum Architecture Laboratory (AQUA)
- 12. University of Oslo
- 13. 𝑘Deutsches Elektronen-Synchrotron (DESY)
Description
The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >1015 1 MeV neq/cm2 and time resolution below 2 ns, with uniform charge collection and efficiency across the pixel of size 36.4 × 36.4 μm2 with small collection electrode. This contribution will present the comparison of samples produced on high-resistivity epitaxial silicon with Czochralski substrates, before and after neutron irradiation, and results from MALTA2 with a new cascoded front-end flavour that further reduces the RTS noise.
Files
WP5-Radiation hardness and timing performance in MALTA.pdf
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