Test-beam performance of proton-irradiated, large-scale depleted monolithic active pixel sensors in 150 nm CMOS technology

The increasing availability of high-resistivity substrates and large biasing voltage capabilities in
commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors
(DMAPS) in high-energy physics experiments. LF-Monopix2 is the latest iteration of a DMAPS
development line designed in 150nm150nm LFoundry technology, which features a large scale (1×2)cm2(1×2)cm2
chip size divided into (56×340)(56×340) pixels with a pitch of (150×50)µm2(150×50)µm2 . Implementation of the full
pixel electronic circuitry within a large charge collection node compromises the sensor's noise and
power budget while assuring short drift distances and a homogeneous electric field in the sensing
part of the detector that increase the radiation hardness. Laboratory characterization and beam
test performance of 100µm100µm thick LF-Monopix2 sensors with backside processing and irradiated
to 1×1015neqcm−21×1015neqcm−2 of NIEL fluence are presented.