Published March 30, 2023 | Version CC BY-NC-ND 4.0
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A Comparative Study of CMOS Transimpedance Amplifier (TIA)

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  • 1. Research Scholar, Indira Gandhi Delhi Technical University for Women, Kashmeri Gate, Delhi, India.
  • 2. Professor, Indira Gandhi Delhi Technical University for Women, Kashmeri Gate, Delhi, India.

Contributors

Contact person:

  • 1. Research Scholar, Indira Gandhi Delhi Technical University for Women, Kashmeri Gate, Delhi, India.

Description

Abstract: In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters of transimpedance amplifier such as gain, input refereed noise, power dissipation and group delay are studied and compared. Here the transimpedance amplifier is divided on the basis of its topology and device technology used and performance is summarized to get the overview. Most of the analysis taken are performed on 0.18 μm technology and some are implemented using 45nm, 0.13μm, 65nm, and 90nm.

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Published By: Lattice Science Publication (LSP) © Copyright: All rights reserved.

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References

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ISSN
gnd:2582-8843 (Online)
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100.1/ijvlsid.A1215033123
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