Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process
Creators
- 1. Universität Bonn
- 2. Aix Marseille University, CNRS/IN2P3, CPPM
- 3. IRFU CEA-Saclay
Description
The LF-Monopix chips are depleted monolithic active pixel sensors that follow the large-electrode design approach and implement a fast synchronous read-out architecture. They are designed in a 150 nm CMOS process and make use of large voltages (>250 V) and highly resistive substrates (>2 kΩ⋅cm) to collect charge through drift and enhance their radiation hardness. Samples of the first prototype (‘‘LF-Monopix1’’) with a thickness of 100 μm were irradiated to assess the tolerance of the chip’s substrate and front-end circuitry to the surface and bulk damage doses expected at modern collider experiments. The device remained fully operational, with only a very small gain degradation and an increase in noise by less than 25% after a total ionizing dose of 100 Mrad. Efficiency measurements in a sample exposed to a neutron fluence of 1 × 1015 neq∕cm2 showed that at least 96% of all minimum ionizing particles going through a fully depleted detector are recorded in less than 25 ns. In the latest design (‘‘LFMonopix2’’) the column length was tripled and the pixel pitch reduced by 40% with respect to its predecessor. The chip was successfully thinned down while keeping its breakdown voltage above 400 V and achieving a front-end threshold dispersion of ∼100 e− after tuning.
Files
Development and testing of a radiation-hard large-electrode DMAPS design.pdf
Files
(1.5 MB)
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