Published August 12, 2021 | Version v1
Presentation Open

Impact of Extended Defects on the yield and Performance of 4H-SiC Power Devices

Creators

  • 1. Fraunhofer Institute for Integrated Systems and Device Technology IISB

Description

Outline

  • Introduction: Yield, performance and reliability of 4H-SiC power devices
  • Influences on yield/performance of 4H-SiC power devices
    • Process variations: A example (lithography)
    • Extended epitaxial defects
      • An overview
      • Stacking faults - Dark triangle defects
      • Stacking faults - Light triangle defects
      • Surface pits in implanted areas
      • Influence of epitaxial defects on gate oxide performance
  • Conclusion
     

Files

Holger_Schlichting_MOS-AK_Xian_2021.pdf

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