Published February 1, 2014
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Characterization of SiO<sub>2</sub>/SiC Interfaces Annealed in N<sub>2</sub>O or POCl<sub>3</sub>
Description
This paper reports a comparative characterization of SiO2/SiC interfaces subjected to
post-oxide-deposition annealing in N2O or POCl3. Annealing process of the gate oxide in POCl3
allowed to achieve a notable increase of the MOSFET channel mobility (up to 108 cm2V-1s-1) with
respect to the N2O annealing (about 20 cm2V-1s-1), accompanied by a different temperature
behaviour of the electrical parameters in the two cases. Structural and compositional analyses
revealed a different surface morphology of the oxide treated in POCl3, as a consequence of the
strong incorporation of phosphorous inside the SiO2 matrix during annealing. This latter explained
the instability of the electrical behaviour of MOS capacitors annealed in POCl3.
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