Engineering Transport Properties in Interconnected Enargite-Stannite Type Cu2+xMn1−xGeS4 Nanocomposites
- 1. CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
- 2. College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, China Analytical and Testing Center of Chongqing University, Chongqing 401331, China
- 3. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
- 4. Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187, Dresden, Germany
- 5. Univ Rennes, CNRS, ISCR – UMR 6226, F-35000 Rennes, France
- 6. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Description
Understanding the mechanism that connects heat and electron transport with crystal structures and defect chemistry is fundamental to develop materials with thermoelectric properties. In this work, we synthesized a series of self-doped compounds Cu2+xMn1-xGeS4 through Cu for Mn substitution. Using a combination of powder X-ray diffraction, high resolution transmission electron microscopy and precession-assisted electron diffraction tomography, we evidence that the materials are composed of interconnected enargite- and stannite-type structures, via the formation of nanodomains with a high density of coherent interfaces. By combining experiments with ab-initio electron and phonon calculations, we discuss the structure–thermoelectric properties relationships and clarify the interesting crystal chemistry in this system. We demonstrate that excess Cu+ substituted for Mn2+ dope holes into the top of the valence band, leading to a remarkable enhancement of the power factor and figure of merit ZT.
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Angew Chem Int Ed - 2022 - Pavan Kumar - Engineering Transport Properties in Interconnected Enargite‐Stannite Type Cu2 xMn1.pdf
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