Laser trimming for lithography-free fabrications of MoS2 devices
Creators
- 1. Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain
- 2. Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Description
Single-layer MoS2 produced by mechanical exfoliation are usually connected to thicker, multilayer, regions. We show a facile laser trimming method to insulate single-layer MoS2 regions from thicker ones. We demonstrate, through electrical characterization, that the laser trimming method can be used to pattern single-layer MoS2 channels with regular geometry and electrically disconnected from the thicker areas. Scanning photocurrent microscope further confirms that in the as-deposited flake (connected to a multilayer area) most of the photocurrent is being generated in the thicker flake region. After laser trimming, scanning photocurrent microscopy shows how only the single-layer MoS2 region contributes to the photocurrent generation. The presented method is a direct-write and lithography-free (no need of resist or wet chemicals) alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS2 and similar 2D materials.
Files
Files
(49.1 MB)
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