Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics
Creators
- 1. University of Milano Bicocca
- 2. CNR-IMM Unit of Agrate Brianza
- 3. STMicroelectronics,
Description
In this work, we disclose the growth of nanocrystalline rutile IrO2 at T = 150 C adopting
a new plasma-assisted ALD (PA-ALD) process. The morphological, structural, physical, chemical,
and electrochemical properties of the IrO2 thin films are reported. To the best of our knowledge, the
electrochemical characterization of the electrode/electrolyte interface in terms of charge injection
capacity, charge storage capacity, and double-layer capacitance for IrO2 grown by PA-ALD was not
reported yet. IrO2 grown on PtSi reveals a double-layer capacitance (Cdl) above 300 Fcm2, and a
charge injection capacity of 0.22+-0.01 mC cm2 for an electrode of 1.0 cm2, confirming IrO2 grown
by PA-ALD as an excellent material for neuroelectronic applications.
Files
nanomaterials-13-00976.pdf
Files
(4.8 MB)
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