Published July 28, 2022 | Version Version of Record
Journal article Open

Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance

  • 1. Solid-State Electronics Laboratory, TU Dresden, 01062 Dresden, Germany

Description

This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions - consisting of ferromagnetic oxides with a Curie temperature not far above room temperature - are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.

Files

electronicmat-03-00019.pdf

Files (3.3 MB)

Name Size Download all
md5:5f608a1acbb67f45a1b80d35d43d1c64
3.3 MB Preview Download

Additional details

Funding

European Commission
SPINMULTIFILM – Physical principles of the creation of novel SPINtronic materials on the base of MULTIlayered metal-oxide FILMs for magnetic sensors and MRAM 778308