INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON (A-SI:H)

In this manuscript,it was investigated that the mechanism of recombinational processes in the film of  a-Si: H <B>  in terms of the dependence of Stationary photoconductivity on temperature(The method of the dependence of Steady-State Photoconductivity on temperature). By using the solutions of continuity and electric equilibrium equations, they were explained that non-monotony and rebombination processes is differently related to D-centers by division  temperature into two intervals for the strongly absorbed  a -Si:H<B>   are evident from the relation of  σ ~ σ₀(1/T).