High mobility SiMOSFETs fabricated in a full 300 mm CMOS process

The quality of the semiconductor-barrier interface plays a pivotal role in
the demonstration of high quality reproducible quantum dots for quantum information
processing. In this work, we have measured SiMOSFET Hall bars on undoped Si
substrates in order to investigate the device quality. For devices fabricated in a full
CMOS process and of very thin oxide below a thickness of 10 nm, we report a record
mobility of 17.5 × 103 cm2/Vs indicating a high quality interface, suitable for future
qubit applications. We also study the influence of gate materials on the mobilities and
discuss the underlying mechanisms, giving insight into further material optimization
for large scale quantum processors.