Published September 12, 2021 | Version v2
Conference paper Open

COMSOL Model of a Three-Gate Junctionless Transistor

Description

A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.

Notes

DOI: 10.1109/MIEL52794.2021.9569053

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Additional details

Funding

RADICAL – Fundamental Breakthrough in Detection of Atmospheric Free Radicals 899282
European Commission