Published September 12, 2021
| Version v2
Conference paper
Open
COMSOL Model of a Three-Gate Junctionless Transistor
Creators
- 1. Technical University of Sofia; Smartcom Bulgaria
Description
A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.
Notes
DOI: 10.1109/MIEL52794.2021.9569053
Files
Figures-MIEL.zip
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