PSP103.8 MOSFET model : improvement of the charge model for short channel transistors

PSP is a well-known surface potential based model for deep-submicron bulk MOSFET. Initially, PSP model was grounded from MOS Model 11 (from NXP Semiconductors) and SP (from Pennsylvania State University and later at Arizona State University). In December 2005, PSP has been elected a new industrial standard model by the Compact Model Council (CMC). Since 2015, this model is jointly developed by NXP Semiconductors and CEA-Leti. In this presentation, we propose an overview of recent PSP versions with a focus on the latest developments about the charge model. The most recent version is PSP103.8. In this version, new models of the inner fringe charges and the inversion of overlaps have been introduced to improve the accuracy of the model for short channel transistors. These models were developed thanks to rigorous analysis of TCAD simulations detailed in this presentation. Experimental data will be use to validate this new PSP version and to estimate the increase of the model accuracy.