Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Authors/Creators
- 1. University of Padova
- 2. imec
- 3. CMST imec/UGent
- 4. Fraunhofer Institute for Microstructure of Materials and Systems IMWS
Description
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor
field effect transistor (MOSFET) is a promising architecture for the development of efficient GaNbased
power transistors on foreign substrates for power conversion applications. This work presents
an overview of recent case studies, to discuss the most relevant challenges related to the development
of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle
the most relevant reliability issues. First, we describe leakage and doping considerations, which
must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we
describe gate design techniques to improve breakdown performance, through variation of dielectric
composition coupled with optimization of the trench structure. Finally, we describe how to identify
and compare trapping effects with the help of pulsed techniques, combined with light-assisted
de-trapping analyses, in order to assess the dynamic performance of the devices.
Notes
Files
materials-14-02316-v2.pdf
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