van der Waals Epitaxy of Co10-xZn10-yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties
Creators
- 1. Laboratory of Nanoscale Magnetic Materials and Magnonics, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL , Lausanne 1015, Switzerland
- 2. Laboratory of Semiconductor Materials,Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
- 3. Laboratory of Nanoscale Magnetic Materials and Magnonics, Institute of Materials and Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne EPFL , Lausanne 1015, Switzerland
- 4. Laboratory of Semiconductor Materials,Institute of Materials and Institute of Physics, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
Description
Raw data associated to the manuscript “van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties", J. Phys. Chem. C 2021, XXXX, XXX, XXX-XXX, DOI: https://doi.org/10.1021/acs.jpcc.1c00452
Abstract:
Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an approach to produce strain-free epitaxial thin films of Co10–xZn10–yMnx+y using molecular beam epitaxy. Bulk Co10–xZn10–yMnx+y is known to host skyrmions at room temperature for specific composition ratios. Our substrate consists of graphene on oxidized silicon. The van der Waals interactions of the grown material with graphene avoids covalent bonding and corresponding strain. We show how defects in the graphene foster nucleation resulting into three different kinds of morphologies: islands, columns and merged films. Susceptibility measurements suggest a phase transition close to room temperature. We detect up to three spin waves resonances suggesting relatively low magnetic damping. This growth technique opens a new route for integrating complex alloys and skyrmionic device concepts with silicon electronics.
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- Journal article: 10.1021/acs.jpcc.1c00452 (DOI)