Published January 15, 2021 | Version v1
Preprint Open

High‐Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells

Creators

  • 1. International Iberian Nanotechnology Laboratory
  • 2. Université Catholique de Louvain, ICTEAM institute
  • 3. Ångström Laboratory, Solid State Electronics, Ångström Solar Center, Uppsala University
  • 4. CEFITEC, Departamento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa

Description

Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiOx passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade‐off between passivation effect and charge extraction, as demonstrated by the trade‐off between open‐circuit voltage (Voc) and short‐circuit current density (Jsc) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiOx as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high‐performance and low‐cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiOx as a passivation material for energy conversion devices.

Notes

Fundação para a Ciência e a Tecnologia (FCT) is acknowledged through the project IF/00133/2015, PD/BD/142780/2018, SFRH/BD/146776/2019 and UIDB/04730/2020. The European Union's Horizon 2020 research and innovation programme ARCIGS-M project (grant agreement no. 720887) is acknowledged. This research is also supported by NovaCell – Development of novel Ultrathin Solar Cell Architectures for low-light, low-cost, and flexible opto-electronic devices project (028075) co-funded by FCT and the ERDF through COMPETE2020. This research is supported by InovSolarCells – Development of innovative nanostructured dielectric materials for interface passivation in thin film solar cells project (029696) co-funded by FCT and the ERDF through COMPETE2020.

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Additional details

Funding

European Commission
ARCIGS-M – Advanced aRchitectures for ultra-thin high-efficiency CIGS solar cells with high Manufacturability 720887