Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization
Creators
- 1. Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy
- 2. Department of Chemistry, University of Manchester, Manchester M13 9PL, UK
- 3. Department of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
- 4. Department of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK and Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing, China
Description
We report room-temperature Hall mobility measurements, low-temperature magnetoresistance analysis, and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 ◦C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 Ω/sq after annealing, and are n-type doped, with carrier concentrations in the low 1020 cm−3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm2 V−1 s−1 for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1 – 1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.
Files
Nanoscale2020.pdf
Files
(4.1 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:f068212d404277630d6b97dba88c8030
|
4.1 MB | Preview Download |