Semi-Transparent Quaternary Oxynitride Photoanodes on GaN Underlayers
Creators
- 1. Institute of Inorganic Chemistry, RWTH Aachen University
- 2. Łukasiewicz Research Network, Institute of Electronic Materials Technology
- 3. Department of Materials and Environmental Chemistry, Stockholm University
- 4. Department of Chemistry and Biochemistry, University of Arkansas
- 5. Institute of Applied Physics, Military University of Technology, Poland
- 6. Department of Chemistry and Biochemistry and the Materials Science and Engineering Program, University of Arkansas
Description
Quaternary oxynitrides AB(O,N)3 are promising photoactive materials for solar energy-driven water splitting, but it remains challenging to manufacture them as semi-transparent thin films for the construction of a tandem photoelectrochemical (PEC) cell. In this letter, we develop a generalized approach by chemical solution deposition (CSD) in conjunction with conductive gallium nitride (GaN) on sapphire substrate towards the synthesis of a semi-transparent quaternary oxynitride thin films. Additionally, conformal atomic layer deposition (ALD) technique is employed to make semi-transparent Ta3N5, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrate. The present work demonstrates a synthetic route for quaternary oxynitridebased wireless tandem PEC cells beyond semi-transparent Ta3N5 photoanodes.
Files
transparent quaternary V1.pdf
Files
(2.8 MB)
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