Spin based quantum computer and simulator (SPINUS)

Part of EU Open Research Repository
Published September 10, 2025 | Version v1
Journal article Open

Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Authors/Creators

  • 1. ROR icon Harbin Institute of Technology
  • 2. ROR icon University of Birmingham
  • 3. ROR icon Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area
  • 4. ROR icon Budapest University of Technology and Economics
  • 5. Wigner Research Centre for Physics

Description

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful strategy for optimizing coherent spin-photon interfaces in PL6 divacancy centers within silicon carbide membranes and potentially other similar defect systems.

Files

SPINUS 2506.00345v1.pdf

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Additional details

Identifiers

arXiv
arXiv:2506.00345

Funding

European Commission
SPINUS - Spin based quantum computer and simulator (SPINUS) 101135699