A 0.3 THz Transmitter in 90-nm BiCMOS Technology for Energy-Efficient High Data Rate Communication

In this work, an energy-efficiency high data rate transmitter at 0.3 THz is presented. The design is implemented in Infineon’s 90-nm SiGe BiCMOS technology. The 3-dB RF
bandwidth is between 254–303 GHz, and the 3-dB IF bandwidth is 32 GHz. The transmitter is evaluated to support OOK data rates up to 32 Gbps, and 40 Gbps QPSK using an IF carrier. The DC power consumption is 285 mW.