Published December 13, 2025
| Version v1
Conference paper
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Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices
Description
Abstract—In this study, calibration methods are performed on passive structures up to 110 GHz using off-wafer standards and
on-wafer standards. The open and short transistor interconnect measurements are analyzed through a comparison with the
electromagnetic (EM) predictive simulation. The results clearly demonstrate the benefits of utilizing on-wafer calibration methods to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.
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2025-06-11Presented in conference