Published December 13, 2025 | Version v1
Conference paper Open

Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices

Description

Abstract—In this study, calibration methods are performed on passive structures up to 110 GHz using off-wafer standards and
on-wafer standards. The open and short transistor interconnect measurements are analyzed through a comparison with the
electromagnetic (EM) predictive simulation. The results clearly demonstrate the benefits of utilizing on-wafer calibration methods to improve measurement accuracy by significantly reducing the parasitic effects due to the transistor’s interconnects.

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Additional details

Funding

European Commission
Move2THz - Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications 101139842

Dates

Other
2025-06-11
Presented in conference