Ultra-Broadband Frequency Multiplier (x8) Chain in 90-nm SiGe BiCMOS Technology at H-band

This work presents an H-band (220–325 GHz) frequency octupler realized in a 90-nm SiGe BiCMOS process. The 3-dB bandwidth is between 234–305 GHz, resulting in
a fractional bandwidth of 26.3 %. The multiplier achieves a conversion gain between 230–310 GHz. The peak output power is −0.5 dBm, using an input power of −5 dBm. The DC power consumption is 122 mW. This type of circuit is suitable for future communication and radar systems.