AIDAinnova

Part of EU Open Research Repository
Published June 25, 2025 | Version v1
Journal article Open

Compensated LGAD optimisation through van der Pauw test structures

Authors/Creators

  • 1. Dipartimento di Fisica, Università degli Studi di Perugia
  • 2. ROR icon Istituto Nazionale di Fisica Nucleare, Sezione di Perugia
  • 3. ROR icon University of Perugia
  • 4. INFN
  • 5. Fondazione Bruno Kessler
  • 6. Istituto Nazionale di Fisica Nucleare (INFN)
  • 7. Consiglio Nazionale delle Ricerche

Description

A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered compensation of two opposing types of doping implants, requiring a thorough analysis of their evolution due to irradiation. To this end, the experimental measurements of their initial test structures have been compared with Technology CAD simulations both before and after irradiation.

From the measurement-simulation comparison regarding C-V characteristics, the donor removal at high initial donor concentrations (>1016 at/cm3) used in Compensated LGADs has been studied, along with how donor co-implantation influences the beneficial effect of carbon to slow acceptor removal. Furthermore, an innovative application of van der Pauw test structures, typically employed by foundries to monitor process quality, has been implemented. The doping removal of the single implants used in Compensated LGADs has been estimated by examining the variation in sheet resistance with irradiation through these structures.

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Additional details

Funding

European Commission
AIDAinnova - Advancement and Innovation for Detectors at Accelerators 101004761
European Commission
EURO-LABS - EUROpean Laboratories for Accelerator Based Science 101057511
European Commission
CompleX - Doping Compensation in Thin Silicon Sensors: the pathway to Extreme Radiation Environments 101124288