NanoIC - European pilot line for beyond 2nm leading edge System-on-Chip leadership

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Published May 15, 2025 | Version v1
Conference proceeding Open

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

Description

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is 
demonstrated that MS induces a positive Vth shift in the device transfer characteristics and enhances electron trapping during Positive Bias Temperature Instability (PBTI) tests. These effects are attributed to the widening of the IGZO bandgap (EG) and increased accessibility of carriers to AlOX gate oxide trap levels.
As substantial residual MS is generated in 3D device processing, understanding its impact on IGZO TFTs is crucial for enabling future 3D DRAM technology.

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Additional details

Funding

European Commission
MINDSET - Mechanical Impact on Non-silicon Devices: Stress Effects on Technology 101154357
European Commission
NanoIC - European pilot line for beyond 2nm leading edge System-on-Chip leadership 101183277
Digital Europe
101183266

Dates

Accepted
2025-05-15