Vacuum deposited perovskite solar cells employing dopant-free triazatruxene as the hole transport material
Creators
- 1. Instituto de Ciencia Molecular, Universidad de Valencia, C/Catedrático J. Beltrán 2, 46980 Paterna, Valencia, Spain
- 2. Abengoa Research, Abengoa, C/ Energia Solar n° 1, Campus Palmas Altas-41014, Sevilla, Spain
- 3. División de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández, Avda. de la Universidad, s/n, Elche 03202, Spain
Description
Planar perovskite solar cells using organic charge selective contacts were fabricated. In a vacuum deposited perovskite-based solar cell, dopant and additive free triazatruxene as the hole transport layer was introduced for device fabrication. High open-circuit voltage of 1090 mV was obtained using methylammonium lead iodide (Eg=1.55 eV) as light harvesting material, thus representing a loss of only 460 mV which is in close vicinity of mature silicon technology (400 mV). The devices showed a very competitive photovoltaic performance, monochromatic incident photon-to-electron conversion efficiency of 80% and the power conversion efficiencies in excess of 15% were measured with a negligible degree of hysteresis.
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