Published June 28, 2013
| Version 7837
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Characterization of the LMOS with Different Channel Structure
Description
In this paper, we propose a novel metal oxide
semiconductor field effect transistor with L-shaped channel structure
(LMOS), and several type of L-shaped structures are also designed,
studied and compared with the conventional MOSFET device for the
same average gate length (Lavg). The proposed device electrical
characteristics are analyzed and evaluated by three dimension (3-D)
ISE-TCAD simulator. It can be confirmed that the LMOS devices
have higher on-state drain current and both lower drain-induced
barrier lowering (DIBL) and subthreshold swing (S.S.) than its
conventional counterpart has. In addition, the transconductance and
voltage gain properties of the LMOS are also improved.
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