Published August 10, 2024 | Version v1
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DASTURLANGAN LABARATORIYA ISHLARIDA YARIMOʻTKAZGICHLARNING TA'QIQLANGAN ZONA KENGLIGI TUSHUNCHASI

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2024

References

  • 1. S.Zaynobiddinov, Sh.Yoʻlchiyev, D.Nazirov, M.Nosirov. Yarimoʻtkazgichlarda atomlar diffuziyasi. Toshkent 2012. 5-6 s
  • 2. Physical Models for Semiconductor Device Simulation. Andreas Schenk pp. 4-5
  • 3. D.B.Klaassen, J.W.Slotboom, and H.C. de Graaff. Unified apparent bandgap narrowing in n- and p-type silicon" Solid State Electron, vol. 35, no. 2, pp. 125–129, 1992.
  • 4. S.C. Jain and D.J. Roulston, "A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers," Solid-State Electronics, vol. 34, no. 5, pp. 453–465, 1991