Published April 7, 2024 | Version v1
Conference paper Open

Ge/Si Vertical Separate Absorption Charge Multiplication (VSACM) Avalanche Photo Diodes (APDs): Epitaxial Growth and Impact of Post-Epi Anneal on Excess Carrier Lifetime

Creators

  • 1. ROR icon IMEC

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Loo_GeAPD_ISDM_ICSI_OIO.pdf

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Additional details

Funding

European Commission
SIPHO-G - Advanced GeSi components for next-generation silicon photonics applications 101017194