Published March 5, 2024 | Version v1
Conference paper Open

50 Gbps vertical separate absorption charge multiplication Ge/Si avalanche waveguide photodetectors integrated in a 300-mm Si photonics platform

Creators

  • 1. ROR icon IMEC
  • 2. ROR icon KU Leuven

Description

Abstract: We report 35 GHz Ge-on-Si avalanche photodetectors integrated on 300-mm SOI wafers, enabling high-quality eye diagrams at 50 Gbps NRZ, and low thermal drift of the breakdown voltage (<9 mV/°C). Early stress tests show only a mild drift of dark current and breakdown voltage.

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Additional details

Funding

European Commission
SIPHO-G - Advanced GeSi components for next-generation silicon photonics applications 101017194