Published February 7, 2024
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ELECTRONIC SPECTROSCOPY OF HETEROSYSTEM SI/CU SURFACES WITH NANOSCALE PHASES AND FILMS
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In this article, valence electron state density, energy band parameters, energetic, optical and electrophysical properties of metal oxide and silicide films with thickness ≤ 40 Å formed on Si/Cu surface during ion implantation and annealing were studied.
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References
- 1. K. Hoppe, W.R. Fahrner, D. Fink, S. Dhamodoran, A. Petrov, A. Chandra, A. Saad, F. Faupel, V.S.K. Chakravadhanula, V. Zaporotchenko. Nucl. Instr. Meth. B., 266, 1642–1646 (2008).