Design of SRAM Memories with Different Topologies

This paper presents a comprehensive analysis of three static random access memory (SRAM) cell designs: 6T, 9T, and 10T. The purpose of the analysis is to determine the most suitable SRAM cell for attaining low power consumption and high-speed performance. Each cell design is evaluated based on various parameters, including write access time and power    dissipation. The results obtained from the analysis provide valuable  insights into the trade-offs between power consumption and performance, enabling the selection of an optimal SRAM cell for specific design requirements.