The charge carrier mobilities of hybrid perovskite transistors reported in H. Zhu et al., Nat. Commun. 13, 1741 (2022) DOI: 10.1038/s41467-022-29434-x appear to be severely overestimated (by at least a factor of 4 in transistors and a factor of ~ 670 in Hall-effect measurements) as the result of misinterpreted transistor characteristics, the use of significantly underestimated gate-channel capacitance, and apparently faulty Hall effect measurements.

The charge carrier mobilities, mu, of hybrid perovskite thin-film transistors (TFTs) reported by H. Zhu et al. (DOI: 10.1038/s41467-022-29434-x) are found to be grossly overestimated. The actual mobility of the best device (stated to be fabricated “via rational halide anion (I/Br/Cl) engineering”), correctly calculated from the published data, is in the range mu_sat = 3.6 – 4.88 cm²V^-1s^-1, not 20 cm²V^-1s^-1 claimed by the authors. In addition, our analysis of the reported Hall effect results obtained in ungated thin films of the same (optimized) composition, shows that the Hall carrier concentration reported by the authors is underestimated by a factor of ~ 670 (compared to the carrier density determined from the electrical TFT data). Apparently, this explains the severely overestimated Hall mobility of mu_Hall = 301 cm²V^-1s^-1 reported in this paper. Our conclusion is that the main claims of this paper regarding the realization of “high-performance perovskite transistors” with the stated mobilities appears to be misleading.