Published December 14, 2023
| Version v1
Project deliverable
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GaN RF Amplifier Module at kW level
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Description
A new solid-state power amplifier in Gallium Nitride (GaN) semiconductor technology was developed in the I.FAST project and is reported here to deliver 1-kW with 82.45% power added efficiency at 750 MHz. This is the first demonstration of operation with high efficiency and nominal power of the first GaN power amplifier above 1-kW power level at 750 MHz.
Files
IFAST_Del13.3_Final.pdf
Files
(1.3 MB)
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md5:1163756923189fa3908c44d019701764
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Additional details
Dates
- Accepted
-
2023-12-14
References
- I.FAST Del13.3