THERMODYNAMIC CONDITIONS FOR THE FORMATION OF GaSb BINARY COMPOUND IN Si SAMPLE

In this work, silicon samples ligated with gallium and antimony impurity atoms were investigated by the 4-probe method. The diffusion process was carried out at temperatures of 1000, 1100, 1175 and 1250 °C. The results of the experiment revealed that 1100 °C is the most favorable temperature for the formation binary compound GaSb of Ga and Sb impurity atoms. These obtained results require a deeper study of the bonding conditions of Ga and Sb impurity atoms.