ELECTROPHYSICAL PROPERTIES OF BINARY SILICON-GERMANIUM COMPOUNDS IN SILICON

The article presents the electrophysical properties of Ge_xSi_1-x binary compounds in silicon, a new material widely used in the field of electronics and photovoltaics. The main parameters of semiconductor materials were calculated: resistivity, concentration and mobility of charge carriers were studied by the Van de Pauw method. In addition, the IR field of binary Ge_xSi_1-x compounds was studied using a spectrophotometer. We know that the mobility of electrons in germanium is µ=3000 Ohm*cm/s. Such a high mobility makes it possible to form a silicon-germanium bond on the surface and near-surface region of silicon and use it in the field of electronics and photovoltaic.