ESTEEM3 Project (H2020)
Published March 5, 2021 | Version v1
Journal article Open

Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

Creators

  • 1. University of Strathclyde
  • 2. Corazon Communications
  • 3. University of Bristol
  • 4. University of Cambridge
  • 5. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons
  • 6. University of Liverpool

Description

Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.

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Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors.pdf

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Additional details

Funding

ESTEEM3 – Enabling Science and Technology through European Electron Microscopy 823717
European Commission