Journal article Open Access
Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices
Xiaodong Shi;
Yaoqin Lu;
Didier Chaussende;
Karsten Rottwitt;
Haiyan Ou
Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidationassisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 ◦C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the hightemperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.
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- Publication date:
- March 15, 2023
- DOI:
-
- Keyword(s):
- Silicon carbide photonic chips
- Grants:
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European Commission:
- SiComb - CMOS compatible and ultra broadband on-chip SiC frequency comb (899679)
- Communities:
- License (for files):
- Creative Commons Attribution 4.0 International