Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

In this work, we disclose the growth of nanocrystalline rutile IrO₂ at T = 150 C adopting
a new plasma-assisted ALD (PA-ALD) process. The morphological, structural, physical, chemical,
and electrochemical properties of the IrO₂ thin films are reported. To the best of our knowledge, the
electrochemical characterization of the electrode/electrolyte interface in terms of charge injection
capacity, charge storage capacity, and double-layer capacitance for IrO2 grown by PA-ALD was not
reported yet. IrO₂ grown on PtSi reveals a double-layer capacitance (Cdl) above 300 Fcm², and a
charge injection capacity of 0.22+-0.01 mC cm² for an electrode of 1.0 cm², confirming IrO₂ grown
by PA-ALD as an excellent material for neuroelectronic applications.