Published January 16, 2023 | Version v1
Journal article Open

Substitutional p-Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD

Creators

  • 1. Electrical Engineering Institute École Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH-1015, Switzerland
  • 2. CNR-ICCOM and IPCF Consiglio Nazionale delle Ricerche via G. Moruzzi 1, Pisa I-56124, Italy
  • 3. Department of Information Engineering and Department of Physics "E. Fermi", Università di Pisa Pisa I-56122, Italy
  • 4. Department of Information Engineering Università di Pisa Pisa I-56122, Italy
  • 5. Electrical Engineering Institute and Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH-1015, Switzerland
  • 6. Institute of Bioengineering École Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH-1015, Switzerland

Description

Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2, which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2–MoS2 lateral heterostructures are synthesized by one-step metal–organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2–MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.

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Additional details

Funding

European Commission
GrapheneCore2 - Graphene Flagship Core Project 2 785219
European Commission
QUEFORMAL - Quantum Engineering for Machine Learning 829035
European Commission
Valleys - Valley and spin devices based on two-dimensional semiconductors 682332
European Commission
EXCITE - Scalable excitonic devices 899775
European Commission
GrapheneCore3 - Graphene Flagship Core Project 3 881603