SiCOMB - A CMOS compatible and ultra broadband on-chip Silicon carbide frequency comb
Published May 31, 2022 | Version v1
Journal article Open

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

Creators

  • 1. FAU

Description

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

Files

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications.pdf

Files (2.6 MB)

Additional details

Funding

SiComb – CMOS compatible and ultra broadband on-chip SiC frequency comb 899679
European Commission