Published February 11, 2023
| Version v1
Dataset
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Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors"
Authors/Creators
- 1. Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 24 rue Lhomond, 75005 Paris, France
- 2. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
- 3. Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Univ Lyon, Université Claude Bernard Lyon 1, F-69622 Villeurbanne, France
- 4. Université de Lyon, MATEIS, UMR CNRS 5510, INSA-Lyon, F-69621 Villeurbanne cedex, France
Description
Current-to-voltage characteristics along with flicker noise amplitude (A factor, description given in the paper) of the devices studied in the main and supplementary text of the article " by A. Schmitt et al. Dimensions of devices are provided in the article
Files
AuS3_final.csv
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(299.3 kB)
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Additional details
Related works
- Is referenced by
- Preprint: arXiv:2301.12957 (arXiv)