Published January 20, 2023
| Version v1
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Supplementary Materials for "Temperature field, flow field and temporal fluctuations thereof 2 in ammonothermal growth of bulk GaN – transition from dis-3 solution stage to growth stage conditions"
Creators
- 1. Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron Devices (LEB), 13 Cauerstraße 6, 91058 Erlangen, Germany
- 2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
- 3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
Description
Video S1: dissolution stage (upper part of nutrient and above), Video S2: 630 dissolution stage (baffle region), Video S3: dissolution stage (top seed), Video S4: dissolution stage 631 (middle seed), Video S5: dissolution stage (bottom seed), Video S6: growth stage (upper part of 632 nutrient and above), Video S7: growth stage (baffle region), Video S8: growth stage (top seed), Video 633 S9: growth stage (middle seed), Video S10: growth stage (bottom seed).
Files
Videos.zip
Files
(897.6 MB)
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