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RADNEXT
Published July 1, 2022 | Version v1
Conference paper Open

Effects of High-Energy Protons on a Self-Refresh DRAM

Creators

  • 1. LIRMM, Univ Montpellier, CNRS
  • 2. University of Jyvaskyla

Description

This work targets the study of the effects of high-energy protons on a commercial self-refresh DRAM. The memory devices under investigation were exposed to high-energy protons varying in a range from 70 MeV up to 230 MeV at the Proton Irradiation Facility in the Paul Scherrer Institute. The radiation-induced faults were identified as Single-Bit Upsets, stuck bits, and block errors. These results are in line with the outcome of our previous test campaigns, targeting thermal and atmospheric-like neutrons. The event cross sections for each fault type and energy are presented and discussed.

Files

Effects_of_High_Energy_Protons_on_a_Self_Refresh DRAM.pdf

Files (12.6 MB)

Additional details

Funding

RADNEXT – RADiation facility Network for the EXploration of effects for indusTry and research 101008126
European Commission