Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system

In this work, the simulation of the processes of diffusion of metal barrier ions into a low-k dielectric between two nearby copper lines was performed. Based on experimental data on the diffusion coefficient published in the scientific literature and calculations according to the mathematical model of the distribution of metal barrier ions in the dielectric, the time dependent breakdown of a porous low-k dielectric in the elements of very large-scale integrated circuits of the modern topological level was estimated. Additionally, the work obtained dependences of the dielectric breakdown time on the distance between two nearby copper lines along with dependence on the power voltage of the line (the other line is grounded).