Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors
Creators
- 1. Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- 2. Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
- 3. AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
- 4. Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany; AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
Description
Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe2) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe2 device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe2 -based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days.
Files
2022 03 13 DRC Braun.pdf
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