Published December 17, 2022
| Version v1
Poster
Open
MOCVD Growth of GaSb, InGaAsSb and AlGaAsSb
- 1. Photin LLC
- 2. Institute of Physics CAS, v.v.i., Czech Republic
Description
Antimony semiconductors are materials of future for short and mid infrared emitters and detectors. This work shares information about growth of GaSb, lattice matched InGaAsSb and AlGaAsSb on (100) GaSb substrates in Aixtron Aix-200 MOCVD reactor, assisted by reflectance anisotropy spectroscopy (RAS) measurement.
Files
MOCVD Growth of GaSb InGaAsSb and AlGaAsSb.pdf
Files
(4.0 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:df085308224d12e504eb41f38c53bad6
|
4.0 MB | Preview Download |