DETERMINATION OF THE DEPENDENCE OF GaMnAs RESISTANCE ON TEMPERATURE ACCORDING TO THE VAN DER PO METHOD

The paper presents the results of investigations of the electrophysical characteristics of GaMnAs layers obtained by low-temperature molecular beam epitaxy. The temperature dependence of the specific resistance of the GaMnAs epitaxial layer and the temperature dependence of ρ(T) on the graph of coordinates 1/T and lnρ are studied.