Info: Zenodo’s user support line is staffed on regular business days between Dec 23 and Jan 5. Response times may be slightly longer than normal.

Published October 31, 2022 | Version v1
Project milestone Open

Demonstration of operation with high efficiency and nominal power of the first GaN amplifier

Description

A new solid-state power amplifier in Gallium Nitride (GaN) semiconductor technology was developed in the I.FAST project and is reported here to deliver 205 W with 82% power added efficiency at 750 MHz. This is the first demonstration of operation with high efficiency and nominal power of the first GaN power amplifier at this power level and frequency. In next steps of the project, six of such amplifiers will be combined together, developing a high efficiency combiner into a kilowatt level amplifier demonstrator.

Files

IFAST_MS63_Final.pdf

Files (1.1 MB)

Name Size Download all
md5:9b23205b77686c55407c77b3770b4e04
1.1 MB Preview Download

Additional details

Funding

I.FAST – Innovation Fostering in Accelerator Science and Technology 101004730
European Commission

References

  • I.FAST MS63