Demonstration of operation with high efficiency and nominal power of the first GaN amplifier

A new solid-state power amplifier in Gallium Nitride (GaN) semiconductor technology was developed in the I.FAST project and is reported here to deliver 205 W with 82% power added efficiency at 750 MHz. This is the first demonstration of operation with high efficiency and nominal power of the first GaN power amplifier at this power level and frequency. In next steps of the project, six of such amplifiers will be combined together, developing a high efficiency combiner into a kilowatt level amplifier demonstrator.