ELECTROPHYSICAL AND SPECTRAL PROPERTIES OF A SOLID SOLUTION (GAAS)1−X(ZNSE)X GROWN FROM A LIQUID PHASE

An epitaxial layer of a graded-gap solid solution (GaAs)1-x(ZnSe)x, 0<x<0.80 was obtained from a tin solution-melt bounded by horizontally arranged GaAs substrates. The composition and homogeneity of the solid solution have been studied. Some electrophysical parameters are given. The effect of gamma irradiation on the current-voltage characteristics of nGaAs-p(GaAs)1-x(ZnSe)x structures has been studied. It is shown that at irradiation doses up to 104 rad, the current-voltage characteristic of the studied structures improves, which is explained by a decrease in the concentration of actively working recombination centers due to the appearance of defect-impurity complexes.